『LMG5200』
Fully integrated 80V GaN half-bridge power module 'LMG5200'
The LMG5200 device incorporates a GaN half-bridge power stage with an 80V, 10A driver and can be used in integrated power stage solutions utilizing enhancement-mode Gallium Nitride (GaN) FETs. This device consists of two 80V GaN FETs driven in a half-bridge configuration by a single high-frequency GaN FET driver. GaN FETs have nearly zero reverse recovery time and very low input capacitance (CISS), providing significant advantages in power conversion. All devices are mounted on a package platform that uses no bond wires, minimizing parasitic elements in the package. The LMG5200 device is supplied in a lead-free package measuring 6mm × 8mm × 2mm, making it easy to mount on PCBs. 【Features】 ■ Low power consumption ■ Ideal for isolated/non-isolated applications ■ Integrates one 80V 10A driver and two 80V 15mΩ GaN FETs ■ Gate driver capable of switching up to 10MHz *For more details, please contact us.
- Company：日本テキサス・インスツルメンツ
- Price：Other
